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for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 76 HMC614LP4 / 614lp4e rms & peak to average power detector 0.1 - 3.9 ghz v03.0109 general description features functional diagram typical applications electrical specifi cations, t a = +25c , vcc= 5v, c int = 0.1 f [2] the HMC614LP4e rms power detector is designed for rf power measurement, and control applications for frequencies up to 3.9 ghz. the detector provides a true rms representation of any rf/if input sig- nal. the output is a temperature compensated, mono- tonic representation of real signal power, measured with a differential input sensing range of 71 db. the HMC614LP4e is ideally suited to those wide bandwidth, wide dynamic range applications, requir- ing repeatable measurement of real signal power; especially where rf/if wave shape and/or crest factor change with time. the HMC614LP4e provides an indication of the in- stantaneous or peak input power level normalized to the average input power level (peak to average power ratio) via the ipwr output. the capability of simultane- ously measuring the instantaneous power (envelope power) and the average true rms power provides crucial information about the rf input signal: peak power, average power, peak to average power and rf wave-shape. ipwr output: instantaneous power, crest factor measurement rf signal wave shape & crest factor independent supports controller mode [1] 1 db detection accuracy to 3.9 ghz input dynamic range: -57 dbm to +15 dbm +5v operation from -40c to +85c excellent temperature stability power-down mode 24 lead 4x4mm qfn package: 9 mm2 the HMC614LP4(e) is ideal for: ? log C> root-mean-square (rms) conversion ? received signal strength indication (rssi) ? transmitter signal strength indication (tssi) ? rf power amplifi er efficiency control ? receiver automatic gain control ? transmitter power control parameter typ. typ. typ. typ. typ. typ. typ. typ. units input frequency 100 900 1900 2200 2700 3000 3500 3900 mhz dynamic range ( 1 db linearity error) [1] 70 71 70 69 62 62 53 45 db differential input confi guration logarithmic slope l o g ar i t h m i c s l o p e 37. 5 37. 5 37.6 3 8 .1 3 9.6 41.0 4 4. 5 5 0. 2 mv/d b logarithmic intercept -69.8 -69.4 -68.8 -67.4 -63.6 -60.8 -54.8 -49.2 dbm max. input power at 1 db error 13 15 >15 >15 12 14 10 5 dbm min. input power at 1 db error -57 -56 -55 -54 -50 -48 -43 -40 dbm deviation vs. temperature : deviation is measured from reference, which is the same cw input @ 25 c differential input interface with 1:1 balun transformer (over full input frequency range) 0.5 db [1] for more information regarding controller mode operation, please contact your hittite sales representative or email sales@h ittite.com [2] differential input drive via 1:1 balun transformer, vtgt = 2v unless otherwise noted.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 77 HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz absolute error wrt to cw response @ 1900 mhz for different modulation schemes, vtgt= 1v rmsout vs. pin with different modulations @ 1900 mhz, vtgt= 1v absolute error wrt to cw response @ 1900 mhz for different modulation schemes, vtgt= 2v rmsout error vs. pin with different modulations @ 1900 mhz, vtgt= 1v 0 0.5 1 1.5 2 2.5 3 3.5 4 -70 -60 -50 -40 -30 -20 -10 0 10 ideal cw 1 carrier cdma 2 carrier cdma 4 carrier cdma qam256 rmsout (v) input power (dbm) -4 -3 -2 -1 0 1 2 3 4 -60 -50 -40 -30 -20 -10 0 10 cw 1 carrier cdma 2 carrier cdma 4 carrier cdma qam256 error (db) input power (dbm) 0 0.1 0.2 0.3 0.4 0.5 -70 -60 -50 -40 -30 -20 -10 0 10 1 carrier cdma 0.06 db average 2 carrier cdma 0.05 db average 4 carrier cdma 0.16 db average qam256 0.11 db average error (db) input power (dbm) 0 0.5 1 1.5 2 -70 -60 -50 -40 -30 -20 -10 0 10 1 carrier cdma 0.20 db average 2 carrier cdma 0.35 db average 4 carrier cdma 0.74 db average qam256 0.11 db average error (db) input power (dbm) parameter typ. typ. typ. typ. typ. typ. typ. typ. units input frequency 900 1900 2700 3900 mhz average modulation deviation error from cw input [2] 1 carrier cdma 0.02 0.06 0.08 0.03 db 2 carrier cdma 0.02 0.05 0.11 0.02 db 3 carrier cdma 0.15 0.16 0.23 0.16 db qam256 0.01 0.03 0.05 0.01 db ipwr/iref outputs ipwr output voltage with cw input (average power= instantaneous power) 1.6v iref output voltage same termination resistance as ipwr 1.6v ipwr output slope for input power change normalized to average power [3] vtgt = 2v 190 mv vtgt = 1v 95 mv ipwr output slope variation with temperature from -40c to 85c 3% ipwr output modulation bw for 3 db voltage drop in output swing 35 mhz [1] differential input drive via 1:1 balun transformer. [2] modulation data taken with vtgt = 1v [3] ipwr = a(pin(t)/pave)+b, a is defi ned as ipwr slope for input power change normalized to average power. table 2: electrical specifi cations [1] evaluation kit (diff. input confi g.) t a = +25c, vcc= 5v, c int = 0.1 f unless otherwise noted
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 78 parameter conditions min. typ. max. units differential input confi guration input network return loss [1] [1] >10 db input resistance between in+ and in- between pins 3 and 4 200 input voltage range v diffin = v in+ - v in- 2.25 v rmsout output output voltage range rl = 1k, cl = 4.7pf [2] 0.4 - 3.2 v source/sink current compliance rmsout held at vcc/2 8 / 0.35 ma max. load capacitance with c int = 0 pf output slew rate (rise / fall) with c int = 0, cofs = 0 100 / 5 10 6 v/s v set input (negative feedback terminal) input voltage range [2] 0.4 - 3.2 v input resistance 1m v ref output (reference voltage) v ref output voltage 2.95 v v ref change over full temperature range 20 mv v tgt input (rms target interface) input voltage range 3.65 v input resistance 1m enx logic input (power down control) input high voltage standby mode active 3.9 v input low voltage normal operation 1.2 v input high current 1a input low current 1a input capacitance 0.5 pf power supply supply voltage 4.5 5 5.5 v supply current with pin = -70 dbm over full temperature range 65 76 ma supply current with pin = 0 dbm over full temperature range 83 95 ma standby mode supply current enx = hi 1 ma [1] performance of differential input confi guration is limited by balun. balun used is macom etc1-1-13 good over 4.5 mhz to 300 0 mhz [2] for nominal slope / intercept setting. HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz [1] cw input waveform rmsout & error vs. pin @ 100 mhz [1] rmsout & error vs. pin @ 900 mhz [1] 0 1 2 3 4 -4 -2 0 2 4 -70 -60 -50 -40 -30 -20 -10 0 10 ideal rmsout +25c rmsout +85c rmsout -40c err +25c err +85c err -40c logout (v) error (db) input power (dbm) 0 1 2 3 4 -4 -2 0 2 4 -70 -60 -50 -40 -30 -20 -10 0 10 ideal rmsout +25c rmsout +85c rmsout -40c err +25c err +85c err -40c logout (v) error (db) input power (dbm) table 3: electrical specifi cations iii , hmc610lp4e evaluation kit (diff. input confi g.), ta = +25c, vcc= +5v, c int = 0.1 f, unless otherwise noted.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 79 [1] cw input waveform rmsout & error vs. pin @ 1900 mhz [1] rmsout & error vs. pin @ 2200 mhz [1] 0 1 2 3 4 -4 -2 0 2 4 -70 -60 -50 -40 -30 -20 -10 0 10 ideal rmsout +25c rmsout +85c rmsout -40c err +25c err +85c err -40c logout (v) error (db) input power (dbm) 0 1 2 3 4 -4 -2 0 2 4 -70 -60 -50 -40 -30 -20 -10 0 10 ideal rmsout +25c rmsout +85c rmsout -40c err +25c err +85c err -40c logout (v) error (db) input power (dbm) HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz rmsout & error vs. pin @ 2700 mhz [1] rmsout & error vs. pin @ 3000 mhz [1] 0 1 2 3 4 -4 -2 0 2 4 -70 -60 -50 -40 -30 -20 -10 0 10 ideal rmsout +25c rmsout +85c rmsout -40c err +25c err +85c err -40c logout (v) error (db) input power (dbm) 0 1 2 3 4 -4 -2 0 2 4 -70 -60 -50 -40 -30 -20 -10 0 10 ideal rmsout +25c rmsout +85c rmsout -40c err +25c err +85c err -40c logout (v) error (db) input power (dbm) rmsout & error vs. pin @ 3500 mhz [1] rmsout & error vs. pin @ 3900 mhz [1] 0 1 2 3 4 -4 -2 0 2 4 -70 -60 -50 -40 -30 -20 -10 0 10 ideal rmsout +25c rmsout +85c rmsout -40c err +25c err +85c err -40c logout (v) error (db) input power (dbm) 0 1 2 3 4 -4 -2 0 2 4 -70 -60 -50 -40 -30 -20 -10 0 10 ideal rmsout +25c rmsout +85c rmsout -40c err +25c err +85c err -40c logout (v) error (db) input power (dbm)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 80 HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz [1] see application circuit for location of r1 [2] see application section log-slope, r fbk = 12k, r set = 24k [3] v tgt 1v, average input power = 0 dbm [4] v tgt 2v, average input power = 0 dbm frequency vs. intercept over supply voltage [1] frequency vs. slope over supply voltage [1] frequency vs. intercept over temperature [1] frequency vs. slope over temperature [1] -80 -75 -70 -65 -60 -55 -50 -45 -40 0 500 1000 1500 2000 2500 3000 3500 4000 4.5v 5.0v 5.5v intercept (dbm) frequency (mhz) -80 -75 -70 -65 -60 -55 -50 -45 -40 0 500 1000 1500 2000 2500 3000 3500 4000 +25c +85c -40c intercept (dbm) frequency (mhz) 30 35 40 45 50 55 60 0 500 1000 1500 2000 2500 3000 3500 4000 4.5v 5.0v 5.5v slope (mv/db) frequency (mhz) 30 35 40 45 50 55 60 0 500 1000 1500 2000 2500 3000 3500 4000 +25c +85c -40c slope (mv/db) frequency (mhz) rmsout vs. pin, slope adjustment [1] rmsout vs. pin, intercept adjustment [2] 0 1 2 3 4 -70 -60 -50 -40 -30 -20 -10 0 10 rmsout @ r1= 24kohms rmsout @ r1= 12kohms rmsout @ r1= 6.8kohms rmsout (v) input power (dbm) slope = 48mv/db slope = 26mv/db slope = 35mv/db 0 1 2 3 4 -70 -60 -50 -40 -30 -20 -10 0 10 rmsout @ vset = -1.0v rmsout @ vset = -0.5v rmsout @ vset = 0v rmsout @ vset = 0.5v rmsout @ vset = 1.0v rmsout (v) input power (dbm) vset = -1.0v, x intercept = -82.2dbm vset = -0.5v, x intercept = -75.5dbm vset = 0v, x intercept = -68.8dbm vset = 0.5v, x intercept = -62.1dbm vset = 1.0v, x intercept = -55.4dbm
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 81 [1] see application circuit for location of r1 [2] see application section log-slope, r fbk = 12k, r set = 24k [3] v tgt 1v, average input power = 0 dbm [4] v tgt 2v, average input power = 0 dbm [5] p in = -20 dbm @ 1.9 ghz HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz ipwr output for an input crest factor of 9.03 db over temperature vs. time [3] 1.4 1.5 1.6 1.7 1.8 1.9 2 012345 +25c +85c -40c ipwr output (v) time (us) ipwr output & input rf signal envelope vs. time for an input crest factor of 9.03 db [4] ipwr output & input rf signal envelope vs. time for an input crest factor of 12.04 db [4] ipwr output for an input crest factor of 12.04 db over temperature vs. time [3] 1.4 1.6 1.8 2 2.2 2.4 012345678 +25c +85c -40c ipwr output (v) time (us) 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -1.4 -0.6 0.2 1 1.8 2.6 3.4 4.2 012345678 ipwr output (v) input rf signal envelope (v) time (s) ipwr output input rf signal envelope 0 0.4 0.8 1.2 1.6 2 2.4 -0.8 -0.4 0 0.4 0.8 1.2 1.6 012345 ipwr output (v) input rf signal envelope (v) time (s) ipwr output input rf signal envelope ipwr output vs. instantaneous input power (normalized to average power) [5] peak ipwr vs input crest factor [5] 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 024681012 =pin/pav*0.2+(1.6-0.2) ipwr output vtgt = 2v =pin/pav*0.1+(1.6-0.1) ipwr output vtgt = 1v ipwr output (v) instantaneous input power (normalized to average power) ipwr(t) = (vtgt/10)x(pin(t)/pavg)+(1.6-(vtgt/10)) 1.6 1.8 2 2.2 2.4 2.6 2.8 3 35791113 peak ipwr output vtgt = 2v peak ipwr output vtgt = 1v peak ipwr output (v) input crest factor (db)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 82 [1] p in = -20 dbm @ 1.9 ghz [2] p in = -22 dbm @ 1.9 ghz output response fall time @ 1900 mhz, c int = open output response fall time @ 1900 mhz, c int = 0.1 f -0.5 0 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 10 dbm 0 dbm -10 dbm -20 dbm -30 dbm rmsout (v) time (ns) input dynamic range to +/- 1db error 0 0.5 1 1.5 2 2.5 3 3.5 0 200 400 600 800 1000 1200 1400 1600 1800 2000 10dbm 0dbm -10dbm -20dbm -30dbm rmsout (v) time (s) input dynamic range to +/- 1db error HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz output response rise time @ 1900 mhz, c int = open output response rise time @ 1900 mhz, c int = 0.1 f 0 0.5 1 1.5 2 2.5 3 3.5 0 50 100 150 200 250 300 350 400 450 500 10 dbm 0 dbm -10 dbm -20 dbm -30 dbm rmsout (v) time (ns) input dynamic range to +/- 1db error 0 0.5 1 1.5 2 2.5 3 3.5 0 200 400 600 800 1000 1200 1400 1600 1800 2000 10 dbm 0 dbm -10 dbm -20 dbm -30 dbm rmsout (v) time (s) input dynamic range to +/- 1db error rms error vs. crest factor over vtgt [2] input return loss -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 345 678 910111213 vtgt = 0.5v vtgt = 1.0v vtgt = 2.0v rmsout error (db) input signal crest factor (db) -40 -35 -30 -25 -20 -15 -10 -5 0 01234 +85c return loss (db) frequency (ghz) defined in large part by balun: 4.5mhz to 3000mhz m/a-com balun#etc1-1-113; -40c 25c
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 83 HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz absolute maximum ratings electrostatic sensitive device observe handling precautions supply voltage 5.6v rf input power 20 dbm max. input voltage 2.25 vrms channel / junction temperature 125 c continuous pdiss (t = 85c) (derate 22.72 mw/c above 85c) 0.91 watts thermal resistance (r th ) (junction to ground paddle) 44.02 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c outline drawing notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters]. 3. lead spacing tolerance is non-cumulative 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hmc application note for suggested pcb land pattern. part number package body material lead finish msl rating package marking [3] HMC614LP4 low stress injection molded plastic sn/pb solder msl1 [1] h614 xxxx HMC614LP4e rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h614 xxxx [1] max peak refl ow temperature of 235 c [2] max peak refl ow temperature of 260 c [3] 4-digit lot number xxxx package information pin number function description interface schematic 1, 6, 8, 11, 21 vcc bias supply. connect supply voltage to these pins with appropriate fi ltering. pin descriptions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 84 HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz pin number function description interface schematic 2, 5, 13 gnd package bottom has an exposed metal paddle that must be connected to rf/dc ground. 3, 4 in+, in- rf input pins. connect rf to in+ and in- through a 1:1 balun. 7enx disable pin. connect to gnd for normal operation. applying voltage v>0.8 vdd will initiate power saving mode. 9, 10 cofs input high pass fi lter capacitor. connect to common via a capacitor to determine 3 db point of input signal high-pass fi lter. 12 n/c no connection. these pins maybe be connected to rf/dc ground. performance will not be affected. 14 vset vset input. set point input for controller mode. 15 rmsout logarithmic output that converts the input power to a dc level. pin descriptions (continued)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 85 HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz pin number function description interface schematic 16 ipwr instantaneous power output continuous tracking of input power envelope. 17 cint connection for ground referenced loop fi lter integration capacitor. see application schematic. 18 iref reference dc voltage for ipwr to replicate voltage at no envelope case. 19 vtgt this voltage input changes the logarithmic intercept point. use of lower target voltage reduces error for complex signals with large crest factors. normally connected to vref. 20 vref reference voltage output. 22, 23 n/c the user should not connect to these pins. pin descriptions (continued)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 86 evaluation pcb the circuit board used in the fi nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 118391 [1] item description j1 - j2 pc mount sma connector j3 - j7 dc pins c1 - c3 1 nf capacitor, 0402 pkg. c4, c6, c8, c11, c17 0.1 f capacitor, 0402 pkg. c5, c7, c9 100 pf capacitor, 0402 pkg. c10 1000 pf capacitor, 0402 pkg. r1, r11 12k resistor, 0402 pkg. r2 0 resistor, 0402 pkg. r4 10k resistor, 0402 pkg. r5 68 resistor, 0402 pkg. r6 61.9k resistor, 0402 pkg. r7 3.92k resistor, 0402 pkg. r24 33k resistor, 0402 pkg. t1 1:1 balun, m/a-com etc1-1-13 u1 HMC614LP4 / HMC614LP4e rms power detector pcb [2] 118389 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: arlon 25fr HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 87 application circuit HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 88 application information monolithic true-rms detectors are in-effect analog calculators, calculating the rms value of the input signal, unlike other types of power detectors which are designed to respond to the rf signal envelope. at the core of an rms detector is a full-wave rectifi er, log/antilog circuit, and an integrator. the rms output signal is directly proportional to the logarithm of the time-averaged v in 2 . the bias block also contains temperature compensation circuits which stabilize output accuracy over the entire operating temperature range. the dc offset cancellation circuit actively cancels internal offsets so that even very small input signals can be measured accurately. the ipwr feature tracks the rf envelope and provides a signal which is directly proportional to instantaneous signal power, normalized to average real power calculated by the rms circuitry. reading both the ipwr and rms output voltage signals provides a very informative picture of the rf input signal: peak power, average power, peak- to-average power, and rf wave-shape. simultaneous measurement of instantaneous signal power and average power is essential for taking full advantage of a receive signal chains available dynamic range, while avoiding saturation, or to maximize transmitter efficiency. principle of operation 0 1 2 3 4 -65 -55 -45 -35 -25 -15 -5 5 15 measured ideal rms output voltage (v) input power (dbm) v rms vs. p in 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -1.4 -0.6 0.2 1 1.8 2.6 3.4 4.2 012345678 ipwr output (v) input rf signal envelope (v) time (s) corresponding ipwr output envelope of rf input signal ipwr output where ? is op-amp gain set via resistors on the v set pin. p in = v rms /[log-slope]+[log-intercept], dbm HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 89 confi guration for the typical application the rf input can be connected in either a differential or single-ended confi guration: see rf input interface section for details on each input confi guration. the rms output signal is typically connected to v set , providing a pin -> v rms transfer characteristic slope of 36.5mv/dbm, however the rms output can be re-scaled to magnify a specifi c portion of the input sensing range, and to fully utilize the dynamic range of the rms output. refer to the section under the log-slope and intercept heading for details. the ipwr output voltage signal can be processed directly for measurement of the input rf envelope, or a peak-hold circuit can be applied for measuring crest factor. see the section under ipwr C instantaneous power for application information. vtgt is also typically connected directly to v ref , however the v tgt voltage can be adjusted to optimize measurement accuracy, especially when measurement at higher crest factors is important: see adjusting v tgt for greater precision section for technical details. due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy absolute accuracy requirements: refer to the system calibration section for more details. rf input interface the in+ and in- pins are differential rf inputs, which can be externally confi gured with differential or single-ended input. power match components are placed at these input terminals, along with dc blocking capacitors. the coupling capacitor values also set the lower spectral boundary of the input signal bandwidth. the inputs can be reactively matched (refer to input return loss graphs), but a resistor network should be sufficient for good wideband performance. differential input interface: single-ended input interface: please contact hittite customer support for details on the single-ended input interface. choose the input decoupling capacitor values (c2, c3) by fi rst determining the lowest spectral component the power detector is required to sense, ? l . c2 = c3 = input decoupling capacitor value farads, where ? l is in hertz. example: if the power detector needs to sense down to 10mhz, the decoupling capacitor value should be 1/(*10e6*3.2) = 10nf a dc bias (vcc-0.7v) is present on the in+ and in- pins, and should not be overridden. the value of rd depends on the balun used; if the balun is 50 on both sides of the se-diff conversion, then r m = the desired power match impedance in ohms for r m = 50, r d = 64.7 ~ ~ 68 r d = 220 * r m , , where 220 - r m ~ ~ 1 x ? l x 3.2 HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 90 transient response can also be slewed by the rms output if it is excessively loaded: keep load resistance above 375. an optimal load resistance of approximately 500 to 1k will allow the output to change as quickly as it is can. for increased load drive capability, consider a buffer amplifi er on the rms output. using an integrating amplifi er on the rms output allows for an alternative treatment for faster settling times. an external amplifi er optimized for transient settling can also provide additional rms fi ltering, when operating HMC614LP4 with a lower c int capacitance value. rms output interface and transient response output transient response is determined by the integration capacitance (c int ), and output load conditions. using larger values of c int will narrow the operating bandwidth of the integrator, resulting in a longer averaging time-interval and a more fi ltered output signal; however it will also slow the power detectors transient response. a larger c int value favors output accuracy over speed. for the fastest possible transient settling times, leave the c int pin free of any external capacitance. this confi guration will operate the integrator at its widest possible bandwidth, resulting in short averaging time-interval and an output signal with little fi ltering. most applications will choose to have some external integration capacitance, maintaining a balance between speed and accuracy. furthermore, error performance over crest factor is degraded when c int is very small (for c int <100pf). modulation & deviation in electrical spec table 2 are given for c int = 0.1 f start by selecting c int using the following expression, and then adjust the value as needed, based on the applications preference for faster transient settling or output accuracy. , in farads, where ? lam =lowest amplitude-modulation component frequency in hertz example: when ? lam =10khz, c int = 1500f/(2**1e4) = 24e-9 farads ~ 22nf table: transient response vs. c int capacitance with c ofs = 0 c int rise time (0 dbm) fall time (-30 dbm) fall time (-10 dbm) fall time (0 dbm) 0 34 nsec 140 nsec 620 nsec 820 nsec 100 pf 120 nsec 550 nsec 920 nsec 1.2 sec 1 nf 890 nsec 4.1 sec 6.7 sec 7.9 sec 10 nf 9.6 sec 43 sec 70 sec 83 sec 100 nf 80 sec 360 sec 625 sec 720 sec input signal is 1900 mhz cw-tone switched on and off rms is loaded wtih 1k, 4pf, and v tgt = 2v, d.r. is input dynamic range to 1 db error. HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 91 log-slope and intercept the HMC614LP4 provides for an adjustment of output scale with the use of an integrated operational amplifi er. log- slope and intercept can be adjusted to magnify a specifi c portion of the input sensing range, and to fully utilize the dynamic range of the rms output. a log-slope of 36.5mv/dbm is set by connecting rms output to v set through resistor network for ? = 1 (see sc- hematic). the log-slope is adjusted by applying the appropriate resistors on the rms and v set pins. log-intercept is adjusted by applying a dc voltage to the v set pin. example: an application only requires the power detector to measure input signal power levels ranging from -40 dbm to 0 dbm at 900 mhz. to optimize the full output voltage range of rms, we re-map p in(min) = -40 dbm to rms (min) = 0v and p in(max) = 0dbm to rms (max) =3.2v. log_slope = 36.5 mv/db, log_intercept = -72 dbm at 900 mhz (see electrical specifi cations table 3) input signal power range = 0 dbm - (-40 dbm) = 40 db output voltage range = 3200 mv optimal_slope = 3200 mv/40 db = 80 mv/db then we should apply vzc to shift rms down for p in(min) = -40 dbm to map to rms (min) = 0v rms = (pin C log_intercept) * optimal_slope, with vzc = 0v and with pin = -40 dbm: rms = 2.56v = [(-40 dbm) C (-72 dbm)] * 80 mv/dbm, at 900 mhz so we must shift rms down 2.56v by applying vzc =2x (-2.56v) / -? = 2x (-2.56v) / -3.38 = 1.506 ? = optimal_slope x 2 -1 = 80.0 x 2 -1 = 3.38 = 2r fbk ~ 51 k , at 900 mhz log_ slope 36.5 r set 15 k HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz optimized_slope = (? + 1) * log_slope / 2 optimized_intercept = log_intercept C ? * v zc ? = (r fbk / r set ) x 2 when r fbk = r set , and vzc = 0v: ? = 1 note: apply a capacitor across rfbk for additional stability. note: avoid excessive loading of the rms output: r load > 375 2 2 0v < v set < 3.2v
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 92 ipwr C envelope power normalized to average power the ipwr is an envelope detector output which provides a measurement of instantaneous signal power normalized to average power. the ipwr output makes peak-to-average power comparisons immediately obvious. this simultaneous measurement of envelope power and average power in HMC614LP4 has two fundamental advantages over traditional methods of which employ two different power detectors working in parallel. ? both the ipwr and rms detectors share the same measurement structures, and ? both the ipwr and rms detectors share the same temperature compensation mechanisms. with traditional implementation of peak-to-average power detection, the dominant source of errors is due to the uncorrelated measurement deviations between the two separate detectors. both detectors in the HMC614LP4 share the same circuits, so any deviations, however small, are fully correlated. HMC614LP4 provides a reference voltage, iref (pin 18), wh ich when used with the ipwr output allows cancellation of temperature and supply related variations of the ipwr dc offset. ipwr dc offset is equal to the iref reference voltage, and this level corresponds to the peak-to-average ratio of an unmodulated carrier (cw-tone crest factor = 3db). for the best cancellation of the effects of temperature and supply voltage on ipwr dc offset, load both the ipwr and iref outputs with an equivalent resistance . to measure peak power, a peak-hold mechanism is required at the ipwr output. the peak-hold circuit can be as simple as an rc combination on the ipwr pin. the graph below describes the ipwr peak-hold levels as a function of input crest factor. note that the voltage applied at vtgt has an effect of the ipwr reading. the vtgt signal optimizes internal bias points for measurement accuracy at higher crest factors: refer to the section under adjusting vtgt for greater precision for a full description on crest factor optimization. HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz 1.6 1.9 2.2 2.5 2.8 3 5.7 8.5 11.2 14 vpeak, vtgt=2v, r=30k, c=10nf vpeak, vtgt=1v, r=30k, c=10nf vpeak, , vtgt,=2v, r=100k, c=10nf vpeak, vtgt=1v, r=100k, c=10nf ipwr output (v) input rf signal crest factor (db) =20log(vpeak/vrms) ipwr, peak power output normalized to average power
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 93 standby mode the enx can be used to force the power detector into a low-power standby mode. in this mode, the entire power detector is powered-down. as enx is deactivated, power is restored to all of the circuits. there is no memory of previous conditions. coming-out of stand-by, c int and c ofs capacitors will require recharging, so if large capacitor values have been chosen, the wake-up time will be lengthened. dc offset compensation loop internal dc offsets, which are input signal dependant, require continuous cancellation. offset cancellation is a critical function needed for maintenance of measurement accuracy and sensitivity. the dc offset cancellation loop performs this function, and its response is largely defi ned by the capacitance off the c ofs pin. setting dc offset cancellation, loop bandwidth strives to strike a balance between offset cancellation accuracy, and loop response time. a larger value of c ofs results in a more precise offset cancellation, but at the expense of a slower offset cancellation response. a smaller value of c ofs tilts the performance trade-off towards a faster offset cancellation response. the optimal loop bandwidth setting will allow internal offsets to be cancelled at a minimally acceptable speed. dc offset cancellation loop bandwidth , hz for example: loop bandwidth for dc cancellation with c ofs = 1nf, bandwidth is ~62 khz note: the measurement error produced by internal dc offsets cannot be measured at any single operating point, in terms of input signal frequency and level, with repeatability. measurement error must be calculated to a best fi t line, over the entire operating range (again, in terms of signal level and frequency). adjusting v tgt for greater precision there are two competing aspects of performance, for which v tgt can be used to set a preference. depending on which aspect of precision is more important to the application, the v tgt pin can be used to fi nd a compromise between two sources of rms output error: internal dc offset cancellation error and deviation at high crest factors (>10 db). ? increasing v tgt input voltage will improve internal dc offset cancellation, but deviation at high crest factors will increase slightly. a 50% increase in v tgt should produce an 18% improvement in rms precision due to improved dc offset cancellation performance. ? decreasing v tgt input voltage will reduce errors at high crest factors, but dc offset cancellation performance will be slightly degraded. see rms output error vs. crest factor graph. ? dc offsets are observed as a random ripple in the logarithmic characteristics v tgt infl uence on dc offset compensation v tgt logarithmic linearity error due to internal dc offsets 1.0v nominal +0.2 db 1.5v nominal +0.1 db 2.0v nominal 3.0v nominal -0.06 db 3.5v nominal -0.1 db -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 4 2 4 6 8 10 12 14 16 v tgt = 0.5v v tgt = 1.25v v tgt = 2.0v v tgt = 2.75v v tgt = 3.50v rmsout error (db) crest factor (db) rms output error vs. crest factor **worst case conditions** using circuit described in application & evaluation pcb schematic section HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz 1 (5000)(c ofs +20x10 -12 )
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 94 adjusting v tgt for greater precision (continued) if input signal crest factor is not expected to exceed 10 db, you can improve rms precision by increasing v tgt voltage. keep in mind that changing v tgt also adjusts the log-intercept point, which shifts the input dynamic range. the best set-point for v tgt will be the lowest voltage that still maintains the input dynamic range over the required range of input power. this new v tgt set-point should optimize dc offset correction performance. if error performance for crest factors >10 db requires optimization, set v tgt for the maximum tolerable error at the highest expected crest factor. increasing v tgt beyond that point will unnecessarily compromise internal dc offset cancellation performance. after changing v tgt , re-verify that the input dynamic range still covers the required range of input power. v tgt should be referenced to v ref for best performance. it is recommended to use a temperature stable dc amplifi er between v tgt and v ref to create v tgt > v ref . the v ref pin is a temperature compensated voltage reference output, only intended for use with v tgt . system calibration due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy absolute accuracy requirements. when performing this calibr ation, choose at least two test points: near the top-end and bottom-end of the measurement range. it is best to measure the calibration points in the regions (of frequency and amplitude) where accuracy is most important. derive the log-slope and log-intercept, and store them in non-volatile memory. calibrate ipwr scaling by measuring the peak-to-average ratio of a known signal. for example if the following two calibration points were measured at 2.35 ghz: factory system calibration measurements should be made using an input signal representative of the application. if the power detector will operate over a wide range of frequencies, choose a central frequency for calibration. layout considerations ? mount rf input coupling capacitors close to the in+ and in- pins. ? solder the heat slug on the package underside to a grounded island which can draw heat away from the die with low thermal impedance. the grounded island should be at rf ground potential. ? connect power detector ground to the rf ground plane, and mount the supply decoupling capacitors close to the supply pins. defi nitions: ? log-slope: slope of p in C> v rms best-fi t line, when rms is connected directly to v set in units of mv/db ? log-intercept: x-axis intercept of p in C> v rms transfer characteristic. in units of dbm. ? rms output error: the difference between the measured pin and the best-fi t line. [measured_p in ] = [measured_v rms ] / [best-fi t-slope] + [best-fi t-intercept], dbm ? input dynamic range: the range of average input power for which there is a corresponding rms output voltage with rms output error falling within a specifi c error tolerance. ? crest factor: peak power to average power ratio for time-varying signals. with vrms = 2.34v at pin= -7 dbm, now performing a power measurement: and vrms=1.84v at pin= -16 dbm vrms measures 2.13v slope calibration constant = scc [measured pin] = [measured vrms]*scc + icc scc = (-16+7)/(1.84-2.34) = 18 db/v [measured pin] = 2.13*18.0 C 49.12 = -10.78 dbm intercept calibration constant = icc an error of only 0.22 db icc = pin C scc*vrms = -7 C 18.0 * 2.34 = -49.12 dbm HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power detectors - smt 12 12 - 95 HMC614LP4 / 614lp4e v03.0109 rms & peak to average power detector 0.1 - 3.9 ghz notes:

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